MRF7S19080HR3 MRF7S19080HSR3
9
RF Device Data
Freescale Semiconductor
Zo
=10?
Zload
f = 1880 MHz
Zsource
f = 2040 MHz
f = 1880 MHz
f = 2040 MHz
VDD
=28Vdc,IDQ
= 750 mA, Pout
=24WAvg.
f
MHz
Zsource
?
Zload
?
1880
1.47 -- j7.3
2.10 -- j5.4
1900
1.22 -- j6.7
1.96 -- j5.0
1920
1.43 -- j6.7
2.06 -- j4.9
1940
1.89 -- j6.8
2.27 -- j5.1
1960
2.10 --j7.1
2.45 -- j5.1
1980
2.11 -- j7.2
2.38 -- j5.0
2000
1.60 -- j6.9
2.08 -- j4.9
2020
1.41 -- j6.9
1.84 -- j4.9
2040
1.43 -- j6.5
1.89 -- j4.6
Zsource
= Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Figure 15. Series Equivalent Source and Load Impedance
Zsource
Zload
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
相关PDF资料
MRF7S19100NR1 MOSFET RF N-CH 28V 29W TO270-4
MRF7S19120NR1 MOSFET RF N-CH TO-270-4
MRF7S19170HSR5 IC MOSFET RF N-CHAN NI-880S
MRF7S19210HSR5 MOSFET RF N-CH 28V 63W NI780S
MRF7S21080HSR5 MOSFET RF N-CH 22W NI-780S
MRF7S21110HSR5 MOSFET RF N-CH 33W NI-780S
MRF7S21150HSR5 MOSFET RF N-CH 150W NI780S
MRF7S21170HR5 IC MOSFET RF N-CHAN NI-880
相关代理商/技术参数
MRF7S19100NBR1 功能描述:射频MOSFET电源晶体管 1990MHZ 29W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF7S19100NR1 功能描述:射频MOSFET电源晶体管 1990MHZ 29W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF7S19100NR1_08 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF7S19120NR1 功能描述:射频MOSFET电源晶体管 1990MHZ 36W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF7S19120NR1_09 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF7S19170HR3 功能描述:射频MOSFET电源晶体管 HV7 1.9GHZ 50W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF7S19170HR3_08 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF7S19170HR5 功能描述:射频MOSFET电源晶体管 HV7 1.9GHZ 50W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray